17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation)
Contents
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Nicolas Jean Loubet of Guilderland NY (US)
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17948877 titled 'NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
Simplified Explanation
The semiconductor structure described in the abstract consists of two nanosheet stacks with channel layers and dielectric isolation layers, as well as a gate dielectric layer on top.
- The semiconductor structure includes a first nanosheet stack with one or more first nanosheet channel layers and a first dielectric isolation layer.
- It also includes a second nanosheet stack with one or more second nanosheet channel layers and a second dielectric isolation layer.
- A gate dielectric layer is placed over the top surface of either the first or second dielectric isolation layer.
- Potential Applications:**
- This technology could be used in advanced semiconductor devices for improved performance and efficiency. - It may find applications in high-speed computing, data storage, and communication systems.
- Problems Solved:**
- The semiconductor structure helps in reducing power consumption and improving the speed of electronic devices. - It provides better isolation between different components, leading to enhanced overall performance.
- Benefits:**
- Enhanced performance and efficiency in semiconductor devices. - Improved reliability and durability of electronic systems. - Potential for smaller and more compact device designs.
- Potential Commercial Applications of this Technology:**
- Advanced processors for computers and mobile devices. - High-speed memory modules for data centers. - Communication chips for 5G and beyond networks.
- Possible Prior Art:**
- Previous semiconductor structures with nanosheet technology for improved device performance. - Research on gate dielectric layers in semiconductor devices for enhanced functionality.
- Unanswered Questions:**
1. How does the gate dielectric layer impact the overall performance of the semiconductor structure? 2. Are there any specific manufacturing processes required for creating the nanosheet stacks in this semiconductor structure?
Original Abstract Submitted
A semiconductor structure comprises a first nanosheet stack comprising one or more first nanosheet channel layers and a first dielectric isolation layer over the one or more first nanosheet channel layers, a second nanosheet stack comprising one or more second nanosheet channel layers and a second dielectric isolation layer over the one or more second nanosheet channel layers, and a gate dielectric layer disposed over a top surface of one of the first dielectric isolation layer and the second dielectric isolation layer.
