International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract

VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113178 titled 'VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS

Simplified Explanation

The abstract describes a semiconductor device with a top source/drain structure on a semiconductor channel and a bottom source/drain structure under the channel, consisting of a doped semiconductor part and a conductor part covering the bottom surface of the doped semiconductor part.

• The semiconductor device includes a semiconductor channel, a top source/drain structure, and a bottom source/drain structure.
• The bottom source/drain structure comprises a doped semiconductor part and a conductor part covering the bottom surface of the doped semiconductor part.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Electronics industry

Problems Solved

This technology helps in:

• Enhancing the performance of semiconductor devices
• Improving conductivity and efficiency

Benefits

The benefits of this technology include:

• Increased efficiency
• Enhanced conductivity
• Improved overall performance of semiconductor devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Integrated circuits
• Microprocessors

Possible Prior Art

One possible prior art for this technology could be:

• Previous patents related to semiconductor device structures

Question 1:

What specific materials are used in the doped semiconductor part and the conductor part of the bottom source/drain structure?

Answer:

The abstract does not provide specific details about the materials used in the doped semiconductor part and the conductor part. Further information from the full patent application would be needed to answer this question.

Question 2:

How does the bottom source/drain structure contribute to the overall performance of the semiconductor device?

Answer:

The abstract mentions that the bottom source/drain structure includes a doped semiconductor part and a conductor part, but it does not elaborate on how this structure specifically enhances the performance of the semiconductor device. Further details from the full patent application would be required to address this question.

Original Abstract Submitted

semiconductor device and methods of forming the same include a semiconductor channel. a top source/drain structure is on the semiconductor channel. a bottom source/drain structure is under the semiconductor channel. the bottom source/drain structure includes a doped semiconductor part and a conductor part, with the conductor part covering a bottom surface of the doped semiconductor part.