17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation)
Contents
- 1 STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES
Organization Name
International Business Machines Corporation
Inventor(s)
Sagarika Mukesh of ALBANY NY (US)
Tao Li of Slingerlands NY (US)
Prabudhya Roy Chowdhury of Albany NY (US)
Nikhil Jain of Apple Valley MN (US)
Ruilong Xie of Niskayuna NY (US)
STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17946546 titled 'STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES
Simplified Explanation
The semiconductor structure described in the abstract includes multiple FET device regions with source/drain regions on each side of a gate structure. Placeholder structures are also included adjacent to the source/drain regions of the FETs.
- The semiconductor structure includes a first FET device region with multiple first FETs and a second FET device region with multiple second FETs.
- Each FET in the structure has source/drain regions on each side of a gate structure.
- Placeholder structures are located adjacent to the source/drain regions of the FETs.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps address the following issues:
- Enhancing the performance of FET devices
- Improving the efficiency of semiconductor structures
- Increasing the reliability of integrated circuits
Benefits
The semiconductor structure offers the following benefits:
- Higher functionality of FET devices
- Enhanced overall performance of integrated circuits
- Improved manufacturing processes in the electronics industry
Potential Commercial Applications
The technology could find applications in various commercial sectors, including:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art related to this technology is the use of placeholder structures in semiconductor manufacturing to improve device performance and reliability.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of efficiency and performance?
The article does not provide a direct comparison between this technology and existing semiconductor structures.
What specific improvements does this technology offer over traditional FET device configurations?
The article does not detail the specific enhancements or improvements this technology provides compared to traditional FET device configurations.
Original Abstract Submitted
A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region located on each side of a functional gate structure. A second FET device region is stacked above the first FET device region and includes a plurality of second FETs, each second FET of the plurality of second FETs includes a second source/drain region located on each side of a functional gate structure. The structure further includes at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one the first FETs, and at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at one of the second FETs.
