International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract
Contents
- 1 EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Daniel Schmidt of Niskayuna NY (US)
Tsung-Sheng Kang of Ballston Lake NY (US)
Alexander Reznicek of Troy NY (US)
EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105768 titled 'EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER
Simplified Explanation
The semiconductor device described in the abstract includes a nanosheet stack on a substrate, with source/drain regions on opposite sides of the nanosheet stack, backside and frontside contacts for electrical communication, and a placeholder extending from one end of the source/drain region.
- Nanosheet stack on a substrate
- Source/drain regions on opposite sides of the nanosheet stack
- Backside contact for power distribution
- Frontside contact for backend interconnect
- Placeholder extending from one end of the source/drain region
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications such as mobile devices, computers, and sensors.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the layout and connectivity of source/drain regions and contacts.
Benefits
The benefits of this technology include enhanced electrical performance, increased integration density, and improved power distribution within semiconductor devices.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the development of next-generation integrated circuits and electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of nanosheet structures in semiconductor devices to improve performance and scalability.
Unanswered Questions
How does this technology compare to traditional semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and traditional semiconductor device structures in terms of performance and efficiency.
What are the specific design considerations for implementing this technology in practical semiconductor devices?
This article does not delve into the specific design considerations for implementing this technology in practical semiconductor devices.
Original Abstract Submitted
a semiconductor device includes a nanosheet stack on a substrate. a first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. a backside contact includes a first contact end on a first end of the first source/drain and an opposing second contact end in electrical communication with a backside power distribution network. a frontside contact includes a first contact end on a first end of the second source/drain and an opposing second contact end in electrical communication with a backend of line (beol) interconnect. a placeholder extends from an opposing second end of the second source/drain.
