International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract

DUAL DIELECTRIC STRESSORS

Organization Name

international business machines corporation

Inventor(s)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

CHANRO Park of CLIFTON PARK NY (US)

Min Gyu Sung of Latham NY (US)

DUAL DIELECTRIC STRESSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096946 titled 'DUAL DIELECTRIC STRESSORS

Simplified Explanation

The patent application describes a structure with lower and upper sets of semiconductor channel layers, each with a dielectric layer adjacent to them that applies stress of opposite polarities. This structure includes lower and upper stacks of nanosheet layers with corresponding dielectric layers applying stress of opposite polarities as well.

• Lower and upper sets of semiconductor channel layers
• Lower dielectric layer with first polarity stress on lower set of semiconductor channel layers
• Upper dielectric layer with second polarity stress on upper set of semiconductor channel layers
• Lower stack of nanosheet layers and upper stack of nanosheet layers
• Lower dielectric layer with first polarity stress adjacent to lower stack of nanosheet layers
• Upper dielectric layer with second polarity stress adjacent to upper stack of nanosheet layers

Potential Applications

The technology described in the patent application could potentially be applied in the development of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This technology addresses the need for improved performance and efficiency in semiconductor devices by utilizing stress-inducing dielectric layers to enhance the properties of the semiconductor channel layers.

Benefits

The benefits of this technology include increased speed, reduced power consumption, and improved overall performance of semiconductor devices.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with enhanced capabilities.

Possible Prior Art

One possible prior art in this field could be the use of stress-inducing techniques in semiconductor devices to improve their performance and efficiency.

How does this technology compare to existing stress-inducing techniques in semiconductor devices?

The article does not provide a direct comparison between this technology and other stress-inducing techniques commonly used in semiconductor devices.

What are the specific performance improvements achieved by the stress-inducing dielectric layers in this technology?

The article does not delve into the specific performance enhancements resulting from the stress-inducing dielectric layers used in this technology.

Original Abstract Submitted

a lower set of semiconductor channel layers, an upper set of semiconductor channel layers, a lower dielectric layer adjacent to the lower set of semiconductor channel layers, the lower dielectric layer includes a first polarity stress on the lower set of semiconductor channel layers, and an upper dielectric layer adjacent to the upper set of semiconductor channel layers, the lower dielectric layer includes a second polarity stress on the upper set of semiconductor channel layers with opposite polarity stress of the first polarity stress. forming a lower stack of nanosheet layers and an upper stack of nanosheet layers, forming a lower dielectric layer adjacent to the lower stack of nanosheet layers, the lower dielectric layer includes a first polarity stress, and forming an upper dielectric layer adjacent to the upper stack of nanosheet layers, the upper dielectric layer includes a second polarity stress with opposite polarity.