International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105610 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT

Simplified Explanation

The abstract describes a patent application for a Vertical Tunneling Field Effect Transistor (VTFET) on a wafer with a backside power delivery network. The VTFET has a gate connected to a first backside contact, which is also connected to a portion of the power delivery network. The backside contact is a certain distance away from the VTFET.

• VTFET on wafer with backside power delivery network
• First backside contact connected to gate of VTFET and power delivery network
• Backside contact is a certain distance away from VTFET

Potential Applications

The technology described in the patent application could be used in various electronic devices and systems that require efficient power delivery and control, such as high-performance computing systems, telecommunications equipment, and power management applications.

Problems Solved

This technology addresses the challenge of optimizing power delivery and control in electronic devices, especially those that require high performance and reliability. By integrating the VTFET with a backside power delivery network, the efficiency and effectiveness of power management can be improved.

Benefits

The benefits of this technology include enhanced power delivery efficiency, improved performance of electronic devices, and increased reliability. By utilizing the VTFET and backside power delivery network, manufacturers can create more advanced and reliable electronic systems.

Potential Commercial Applications

The technology has potential commercial applications in the semiconductor industry, particularly in the development of high-performance computing systems, telecommunications infrastructure, and power management solutions. Companies involved in the design and manufacturing of electronic devices could benefit from implementing this technology.

Possible Prior Art

One possible prior art could be the integration of power delivery networks in semiconductor devices, although the specific implementation of a VTFET with a backside power delivery network may be a novel approach.

How does this technology compare to traditional power delivery methods in semiconductor devices?

The article does not provide a direct comparison between this technology and traditional power delivery methods. It would be interesting to see a side-by-side analysis of the efficiency, performance, and reliability of this technology compared to conventional approaches.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world applications. It would be important to consider factors such as cost, scalability, and compatibility with existing systems.

Original Abstract Submitted

a vtfet is on a wafer and a backside power delivery network is on a backside of the wafer. a first backside contact is connected to a gate of the vtfet and a first portion of the backside power delivery network. the vtfet has a first width and the first width is a contacted poly pitch (cpp). the first backside contact may be at least the first width from the vtfet. the first backside contact may be double the first width from the vtfet.