17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)

BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE

Organization Name

International Business Machines Corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17932679 titled 'BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE

Simplified Explanation

The microelectronic structure described in the abstract includes two transistors with multiple channel layers, separated by a dielectric bar. Each transistor has a source/drain located on opposite sides of the dielectric bar, with backside contacts connected to each source/drain.

• The structure consists of a first transistor with multiple first channel layers and a second transistor with multiple second channel layers.
• A dielectric bar separates the first and second transistors.
• The first source/drain of the first transistor is on one side of the dielectric bar, while the second source/drain of the second transistor is on the opposite side.
• Backside contacts are connected to each source/drain, with one contact on each side of the dielectric bar.

Potential Applications

This technology could be applied in advanced semiconductor devices, integrated circuits, and microprocessors.

Problems Solved

This structure helps improve the performance and efficiency of microelectronic devices by optimizing the layout and connectivity of transistors.

Benefits

The design allows for better control of electrical signals, reduces interference between transistors, and enhances overall device functionality.

Potential Commercial Applications

This technology could be valuable in the development of high-speed processors, memory devices, and other complex electronic systems.

Possible Prior Art

One possible prior art could be the use of dielectric bars in microelectronic structures to separate and isolate different components for improved performance and reliability.

How does this technology impact power consumption in microelectronic devices?

This article does not delve into the specific effects of this technology on power consumption in microelectronic devices. Further research and analysis would be needed to determine the impact on power efficiency.

What are the potential challenges in manufacturing microelectronic structures with dielectric bars?

The article does not address the potential challenges that may arise during the manufacturing process of such complex structures. Understanding these challenges and finding solutions would be crucial for practical implementation.

Original Abstract Submitted

A microelectronic structure including a first transistor including a plurality a first channel layers. A second transistor including a plurality of second channel layers, where the first transistor is located adjacent to the second transistors. A dielectric bar located between the first transistor and the second transistor. A first source/drain of the first transistor is located on a first side of the dielectric bar and a second source/drain of the second transistor is located on a second side of the dielectric bar, where the first side is opposite the second side. A first backside contact connected to the first source/drain, where the first backside contact is in contact with first side of the dielectric bar. A second backside contact connected to the second source/drain, where the second backside contact is in contact with the second side of dielectric bar.