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Category:H01L27/088
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Pages in category "H01L27/088"
The following 200 pages are in this category, out of 316 total.
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- 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17458730. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459065. DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459865. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460198. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461618. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17462709. Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17527355. MULTI-VT NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 17541894. STAGGERED STACKED SEMICONDUCTOR DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545013. INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551950. VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17691293. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17745423. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17825798. Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837833. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837925. INTEGRATED STANDARD CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17846606. INTEGRATED CIRCUIT INCLUDING STANDARD CELL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17873180. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17883919. FINFETS WITH REDUCED PARASITICS simplified abstract (Micron Technology, Inc.)
- 17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900001. SEMICONDUCTOR STRUCTURE WITH REDUCED PARASITIC CAPACITANCE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)
- 17943564. Large Surface VBPR for Robust Alignment in Advanced Technology Nodes simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation)
- 17949861. INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH simplified abstract (Intel Corporation)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17956114. SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation)
- 17957106. ETCH STOP LAYER FOR METAL GATE CUT simplified abstract (Intel Corporation)
- 17957580. SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract (Intel Corporation)
- 17957654. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17969491. SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18050219. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED CONTACT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18095080. SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
- 18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097255. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18133977. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18138825. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18143187. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150266. COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18156624. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158036. AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18159200. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18166750. SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171754. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18190444. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18199541. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18201878. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18206187. PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18217012. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18219232. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18301524. GUARD RING STRUCTURE AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18304527. THROUGH VIA WITH GUARD RING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18307259. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18331296. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18333682. CONTACT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18365452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18366864. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18369450. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18370120. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18376549. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378710. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18387801. DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18401833. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18401955. Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18446524. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18481433. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18488381. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492238. METHOD OF USING SEMICONDUCTOR DEVICE AND METHOD OF MAKING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18499258. DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS simplified abstract (Samsung Electronics Co., Ltd.)
- 18504473. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18507138. GAP PATTERNING FOR METAL-TO-SOURCE/DRAIN PLUGS IN A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511064. WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18511533. INTEGRATED CIRCUIT DEVICE INCLUDING A POWER SUPPLY LINE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18517377. STACK-GATE CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518642. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519559. SEMICONDUCTOR DEVICE INCLUDING UNILATERALLY EXTENDING GATES AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520872. DEVICE LAYER INTERCONNECTS simplified abstract (Intel Corporation)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18521951. NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526444. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18538575. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
2
- 20240021614. METHOD TO EMBED PLANAR FETS WITH FINFETS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)
- 20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
B
I
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105716). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG simplified abstract
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240113104). FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract
- Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
- Intel corporation (20240113106). ETCH STOP LAYER FOR METAL GATE CUT simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113109). PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113111). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240113194). SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240096951). STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract
- International business machines corporation (20240112986). COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract
- International business machines corporation (20240113013). SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract
- International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract
- International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on January 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024