18521951. NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 NANOSTRUCTURE WITH VARIOUS WIDTHS
NANOSTRUCTURE WITH VARIOUS WIDTHS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsiao-Han Liu of Miaoli County (TW)
Chih-Hao Wang of Baoshan Township (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
Shi-Ning Ju of Hsinchu City (TW)
Kuan-Lun Cheng of Hsinchu City (TW)
NANOSTRUCTURE WITH VARIOUS WIDTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521951 titled 'NANOSTRUCTURE WITH VARIOUS WIDTHS
Simplified Explanation
The semiconductor structure described in the abstract consists of first and second nanostructures spaced apart in one direction, with source/drain features attached to opposite sides of the first nanostructures in a direction orthogonal to the first. The third and fourth nanostructures are also spaced apart in the same direction, with the third nanostructures wider than the first.
- First and second nanostructures spaced apart in one direction
- Source/drain features attached to opposite sides of the first nanostructures
- Third and fourth nanostructures spaced apart in the same direction
- Third nanostructures wider than the first
Potential Applications
The semiconductor structure could be used in:
- Nanoelectronics
- Quantum computing
- Optoelectronics
Problems Solved
This technology helps to:
- Improve device performance
- Increase integration density
- Enhance functionality of semiconductor devices
Benefits
The benefits of this technology include:
- Higher efficiency
- Greater speed
- Reduced power consumption
Potential Commercial Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Research and development
Possible Prior Art
One possible prior art could be:
- Semiconductor structures with different nanostructure configurations
What are the specific dimensions of the nanostructures in the semiconductor structure?
The abstract does not provide specific dimensions of the nanostructures, such as width or height.
How does the method for forming the semiconductor structure differ from existing methods?
The abstract does not detail how the method for forming the semiconductor structure is unique or different from existing methods.
Original Abstract Submitted
A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.
