18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
INTEGRATED CIRCUITS WITH GATE CUT FEATURES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Zhi-Chang Lin of Hsinchu County (TW)
Wei-Hao Wu of Hsinchu City (TW)
Chih-Hao Wang of Hsinchu County (TW)
Kuo-Cheng Ching of Zhubei City (TW)
INTEGRATED CIRCUITS WITH GATE CUT FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519263 titled 'INTEGRATED CIRCUITS WITH GATE CUT FEATURES
Simplified Explanation
The abstract describes an integrated circuit with gate cut features and a method for forming the integrated circuit. Here are the key points:
- Workpiece received with substrate and fins extending from it.
- First layer formed on side surface of each fin, creating a trench between fins.
- Cut feature formed in the trench.
- First gate structure formed on first fin, second gate structure on second fin with cut feature between them.
Potential Applications
- Advanced semiconductor technology
- High-performance computing
- Mobile devices
- Internet of Things (IoT) devices
Problems Solved
- Improved integration of gate cut features in integrated circuits
- Enhanced performance and efficiency of electronic devices
- Miniaturization of electronic components
Benefits
- Increased processing speed and performance
- Reduction in power consumption
- Smaller and more efficient electronic devices
- Enhanced functionality and capabilities
Original Abstract Submitted
Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.
