17969491. SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG - A simplified explanation of the abstract
This abstract first appeared for US patent application 17969491 titled 'SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG
Simplified Explanation
The patent application describes a semiconductor device that includes a semiconductor substrate with active regions, gate electrodes, an isolation layer, an insulating barrier structure, bitlines, and first contact plugs.
- The semiconductor substrate has active regions and an isolation layer that defines each active region.
- Gate electrodes are present, overlapping the active regions and extending in a first direction parallel to the upper surface of the semiconductor substrate.
- An insulating barrier structure is located at a higher level than the gate electrodes, and it has a grid pattern consisting of grid cells.
- Bitlines are positioned at a higher level than the insulating barrier structure, extending in a second direction perpendicular to the first direction and parallel to the upper surface of the semiconductor substrate.
- First contact plugs are placed in each grid cell of the insulating barrier structure.
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Memory devices
- Microprocessors
- Integrated circuits
Problems Solved
The described semiconductor device addresses the following issues:
- Efficient isolation of active regions on the semiconductor substrate
- Overlapping gate electrodes to enhance device performance
- Proper positioning of bitlines and contact plugs for effective connectivity
Benefits
The patent application offers the following advantages:
- Improved performance and functionality of semiconductor devices
- Enhanced integration and miniaturization capabilities
- Efficient and reliable connectivity between different components
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate provided with active regions, an isolation layer defining each active region on the semiconductor substrate, gate electrodes overlapping the active regions and extending in a first direction parallel to an upper surface of the semiconductor substrate, an insulating barrier structure disposed at a level higher than a level of where the gate electrodes are disposed, the insulating barrier structure having a grid pattern including grid cells, bitlines extending in a second direction perpendicular to the first direction and parallel to the upper surface of the semiconductor substrate, and disposed at a level higher than a level of where the insulating barrier structure is disposed, and first contact plugs, each first contact plug being disposed in a corresponding grid cell of the grid cells of the insulating barrier structure.
