18538575. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Yonghee Park of Hwaseong-si (KR)
Myunggil Kang of Suwon-si (KR)
Uihui Kwon of Hwaseong-si (KR)
Youngseok Song of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18538575 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with a fin-type active region, a gate line, gate contact, source/drain region, and source/drain contact.
- The device includes a fin-type active region on a substrate, extending horizontally.
- A gate line is placed on the fin-type active region, extending in a different horizontal direction.
- The gate line has a connection protrusion portion at a higher vertical level and a main gate portion at a lower vertical level.
- A gate contact is connected to the connection protrusion portion.
- Source/drain regions are adjacent to the gate line.
- Source/drain contacts are placed on the source/drain regions.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance integrated circuits
Problems Solved
This technology addresses:
- Improved gate control
- Enhanced device performance
Benefits
The benefits of this technology include:
- Increased efficiency
- Better overall device performance
Potential Commercial Applications
This technology has potential uses in:
- Consumer electronics
- Telecommunications industry
Possible Prior Art
Prior art in this field includes:
- Traditional gate structures
- Conventional semiconductor devices
Unanswered Questions
How does this technology impact power consumption in the device?
The article does not provide specific information on the power consumption implications of this technology.
Are there any limitations to the size or scale of devices that can utilize this technology?
The article does not address any potential limitations regarding the size or scale of devices that can implement this technology.
Original Abstract Submitted
An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.
