18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ji-Cheng Chen of Hsinchu City (TW)
Ching-Hwanq Su of Tainan City (TW)
Kuan-Ting Liu of Hsinchu City (TW)
Shih-Hang Chiu of Taichung City (TW)
METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522265 titled 'METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
Simplified Explanation
The abstract describes a method of manufacturing a gate structure involving the formation of various layers including a gate dielectric layer, work function layer, barrier layer, and metal layer with fluorine atoms. The barrier layer is formed by depositing a first TiN layer, converting a top portion into a trapping layer with silicon or aluminum atoms, and then forming a second TiN layer on top.
- Formation of gate dielectric layer
- Deposition of work function layer
- Formation of barrier layer
- Introduction of fluorine atoms into the barrier layer
- Formation of trapping layer with silicon or aluminum atoms
- Deposition of metal layer
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors, integrated circuits, and memory chips.
Problems Solved
- Enhanced performance and reliability of gate structures - Improved control over electrical properties - Reduction of leakage currents
Benefits
- Increased efficiency in semiconductor manufacturing processes - Enhanced device performance and functionality - Extended lifespan of semiconductor devices
Potential Commercial Applications
"Advanced Gate Structure Manufacturing Technology for Semiconductor Devices"
Possible Prior Art
Prior art may include patents or publications related to gate structure fabrication, barrier layer deposition, and metal layer integration in semiconductor devices.
Unanswered Questions
How does the presence of fluorine atoms in the barrier layer impact the overall performance of the gate structure?
The abstract does not provide specific details on the influence of fluorine atoms on the gate structure's properties and functionality.
What are the specific methods used to convert the top portion of the first TiN layer into a trapping layer with silicon or aluminum atoms?
The abstract mentions the conversion process but does not elaborate on the techniques or mechanisms employed for this transformation.
Original Abstract Submitted
A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.
