17745423. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Young Mok Kim of Yongin-si (KR)
Kyung Lyong Kang of Hwaseong-si (KR)
Jun Gu Kang of Hwaseong-si (KR)
Yong Sang Jeong of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17745423 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with two regions, each having an active region. The device also includes gate electrodes and gate insulating layers.
- The semiconductor device has a substrate with two regions, each containing an active region.
- There is an active pattern protruding from the first active region.
- The device has two gate electrodes, one on the active pattern and the other on the second active region.
- The gate insulating layers separate the active pattern and the first gate electrode, and the second active region and the second gate electrode.
- The thickness of the first gate electrode that overlaps the active pattern is equal to the thickness of the second gate electrode that overlaps the second active region.
- The upper surface of the first gate electrode is at the same level as the upper surface of the second gate electrode.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems solved by this technology:
- The device provides a simplified structure for a semiconductor device, reducing complexity and manufacturing costs.
- It ensures uniformity in the thickness and level of the gate electrodes, improving device performance.
Benefits of this technology:
- The simplified structure and uniformity in gate electrode thickness and level enhance the overall performance and reliability of the semiconductor device.
- The reduced complexity and manufacturing costs make the device more cost-effective and commercially viable.
Original Abstract Submitted
A semiconductor device includes: a substrate including first and second regions thereon; a first active region in the first region; an active pattern protruding from the first active region; a second active region in the second region; a first gate electrode on the active pattern; a second gate electrode on the second active region; a first gate insulating layer, including a first-first insulating layer, between the active pattern and the first gate electrode; and a second gate insulating layer, including a second-first insulating layer and a second-second insulating layer below the second-first insulating layer, between the second active region and the second gate electrode, wherein a thickness in a vertical direction of the first gate electrode that overlaps the active pattern in the vertical direction is equal to a thickness in the vertical direction of the second gate electrode that overlaps the second active region in the vertical direction, and an upper surface of the first gate electrode is formed at a same level as an upper surface of the second gate electrode.
