17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jun Mo Park of Seoul (KR)

Yeon Ho Park of Seoul (KR)

Eun Sil Park of Hwaseong-si (KR)

Jin Seok Lee of Busan (KR)

Wang Seop Lim of Cheonan-si (KR)

Kyu Bong Choi of Seoul (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17852658 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes multiple sheet patterns and gate electrodes on a substrate.

• The device has first and second sheet patterns on one region of the substrate, and third and fourth sheet patterns on another region of the substrate.
• A first gate electrode extends between the first and second sheet patterns, and a second gate electrode extends between the third and fourth sheet patterns.
• The first gate electrode includes a first work function controlling film and a first filling conductive film, while the second gate electrode includes a second work function controlling film and a second filling conductive film.
• The distance between the third and fourth sheet patterns is greater than the distance between the first and second sheet patterns.

Potential applications of this technology:

• Semiconductor devices in electronic devices such as smartphones, tablets, and computers.
• Integrated circuits for various electronic systems and devices.

Problems solved by this technology:

• Provides a structure for efficient control of the semiconductor device.
• Allows for better performance and functionality of electronic devices.

Benefits of this technology:

• Improved efficiency and performance of semiconductor devices.
• Enhanced functionality and reliability of electronic devices.

Original Abstract Submitted

A semiconductor device includes first and second sheet patterns spaced apart from each other on a first region of the substrate, a first gate electrode extending between the first and second sheet patterns, third and fourth sheet patterns spaced apart from each other on a second region of the substrate, and a second gate electrode extending between the third and fourth sheet patterns. The first gate electrode includes a first work function controlling film, which is between the first and second sheet patterns, and a first filling conductive film on the first work function controlling film. The second gate electrode includes a second work function controlling film, which is between the third and fourth sheet patterns, and a second filling conductive film on the second work function controlling film. A distance between the third and fourth sheet patterns is greater than a distance between the first and second sheet patterns.