17873180. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kuo-Chiang Tsai of Hsinchu City (TW)

Pei-Hsuan Lin of Hsinchu City (TW)

Jeng-Ya Yeh of New Taipei City (TW)

Mu-Chi Chiang of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17873180 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a source region and a drain region, along with a first source contact, a first drain contact, a first drain via, and a first source via. The source and drain regions are located on a substrate, with the first source contact on the source region and the first drain contact on the drain region. The first drain via is connected to the first drain contact and has a barrier-less body portion. The first source via is connected to the first source contact and includes a body portion surrounded by a barrier layer, with a larger size than the first drain via.

  • The patent application describes a semiconductor device with improved contact structures for the source and drain regions.
  • The first drain via includes a barrier-less body portion, which simplifies the manufacturing process and reduces resistance.
  • The first source via includes a body portion surrounded by a barrier layer, providing enhanced performance and reliability.
  • The size of the first source via is larger than the first drain via, allowing for better current flow and improved device performance.

Potential Applications:

  • This technology can be applied in the manufacturing of various semiconductor devices, such as transistors and integrated circuits.
  • It can be used in the development of high-performance electronic devices, including smartphones, computers, and other consumer electronics.

Problems Solved:

  • The contact structures in semiconductor devices can impact device performance and reliability.
  • The barrier-less body portion in the first drain via simplifies the manufacturing process and reduces resistance.
  • The barrier layer in the first source via improves performance and reliability.

Benefits:

  • Improved device performance and reliability due to enhanced contact structures.
  • Simplified manufacturing process and reduced resistance with the barrier-less body portion in the first drain via.
  • Enhanced performance and reliability with the barrier layer in the first source via.
  • Better current flow and improved device performance with the larger size of the first source via.


Original Abstract Submitted

A semiconductor device includes a source region and a drain region, a first source contact, a first drain contact, a first drain via and a first source via. The source region and the drain region are located over a substrate. The first source contact is disposed on the source region, and the first drain contact is disposed on the drain region. The first drain via is connected to the first drain contact, wherein the first drain via includes a barrier-less body portion. The first source via is connected to the first source contact, wherein the first source via includes a body portion and a barrier layer surrounding the body portion, and a size of the first source via is greater than a size of the first drain via.

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