18518642. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

TE-AN Chen of TAICHUNG CITY (TW)

MENG-HAN Lin of HSINCHU (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18518642 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

Simplified Explanation

The present disclosure describes a semiconductor device with a unique structure involving active regions, isolation regions, and a dummy gate.

• The semiconductor device includes:

 * Substrate
 * First active region in the substrate
 * Second active region in the substrate adjacent to the first active region
 * Isolation region in the substrate between the first and second active regions
 * Dummy gate overlapping with the isolation region, with a wider bottom width than the top width of the isolation region

• • Potential Applications of this Technology:**
• This semiconductor device structure could be used in integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.

• • Problems Solved by this Technology:**
• By having a dummy gate with a wider bottom width overlapping the isolation region, this design helps in reducing parasitic capacitance and improving the overall performance of the semiconductor device.

• • Benefits of this Technology:**
• Improved performance and efficiency of the semiconductor device
• Enhanced reliability and functionality of integrated circuits
• Potential cost savings in manufacturing processes

• • Potential Commercial Applications of this Technology:**
• Advanced semiconductor manufacturing companies
• Electronics industry for consumer products
• Research institutions and universities for semiconductor research and development

• • Possible Prior Art:**
• Prior art related to semiconductor device structures with dummy gates and isolation regions can be found in patents and research papers from semiconductor companies and academic institutions.

1. Unanswered Questions
   1. How does the wider bottom width of the dummy gate impact the overall performance of the semiconductor device?

The wider bottom width of the dummy gate helps in reducing parasitic capacitance and improving the efficiency of the device. However, the specific details of how this width affects performance could be further explored through simulation and testing.

1. 1. Are there any limitations or drawbacks to using a dummy gate with a wider bottom width in semiconductor devices?

While the wider bottom width of the dummy gate offers benefits in terms of reducing parasitic capacitance, there may be challenges in terms of layout design and manufacturing processes. Further research could investigate any potential limitations or drawbacks of this design approach.

Original Abstract Submitted

The present disclosure provides a semiconductor device, including a substrate, a first active region in the substrate, a second active region in the substrate and adjacent to the first active region, an isolation region in the substrate and between the first active region and the second active region, and a dummy gate overlapping with the isolation region, wherein an entire bottom width of the dummy gate is greater than an entire top width of the isolation region.