17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation)

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT

Organization Name

Intel Corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Clifford Ong of Portland OR (US)

Sukru Yemenicioglu of Portland OR (US)

Tahir Ghani of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956779 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT

Simplified Explanation

The integrated circuit structure described in the patent application involves fin isolation regions recessed for gate contact. Here is a simplified explanation of the abstract:

• Vertical stack of horizontal nanowires over a first sub-fin
• Gate structure over the vertical stack of nanowires and on the first sub-fin
• Dielectric structure laterally spaced apart from the gate structure, on a second sub-fin
• Dielectric gate cut plug between the gate structure and the dielectric structure
• Recess in the dielectric structure and the dielectric gate cut plug
• Conductive structure in the recess, in lateral contact with a gate electrode of the gate structure

1. 1. 1. Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance transistors and integrated circuits.

1. 1. 1. Problems Solved

This innovation helps in improving the performance and efficiency of integrated circuits by enhancing gate contact and isolation regions.

1. 1. 1. Benefits

The benefits of this technology include increased speed, reduced power consumption, and improved overall functionality of integrated circuits.

1. 1. 1. Potential Commercial Applications

This technology could find applications in the semiconductor industry for developing next-generation electronic devices with enhanced performance.

1. 1. 1. Possible Prior Art

One possible prior art could be the use of traditional gate structures without recessed isolation regions for gate contact in integrated circuits.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing methods of gate contact in integrated circuits?

This article does not provide a direct comparison to existing methods of gate contact in integrated circuits. Further research or analysis would be needed to determine the specific advantages and disadvantages of this technology compared to others.

1. 1. 1. 1. What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?

The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing. Factors such as cost, scalability, and compatibility with existing processes could be important considerations.

Original Abstract Submitted

Integrated circuit structures having fin isolation regions recessed for gate contact are described. In an example, an integrated circuit structure includes a vertical stack of horizontal nanowires over a first sub-fin. A gate structure is over the vertical stack of horizontal nanowires and on the first sub-fin. A dielectric structure is laterally spaced apart from the gate structure. The dielectric structure is not over a channel structure but is on a second sub-fin. A dielectric gate cut plug is between the gate structure and the dielectric structure. A recess is in the dielectric structure and in the dielectric gate cut plug. A conductive structure is in the recess, the conductive structure in lateral contact with a gate electrode of the gate structure.