17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
FINFET WITH LONG CHANNEL LENGTH STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ru-Shang Hsiao of Hsinchu (TW)
Chun-Jung Huang of Hsinchu (TW)
FINFET WITH LONG CHANNEL LENGTH STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17823507 titled 'FINFET WITH LONG CHANNEL LENGTH STRUCTURE
Simplified Explanation
The abstract describes a method of forming a FinFET, which is a type of transistor used in integrated circuits.
- Deposit conductive material across adjacent fins
- Deposit sacrificial mask over the conductive material
- Pattern the conductive material with the sacrificial mask to form segments
- Deposit sacrificial layer over the sacrificial mask
- Pattern the sacrificial layer, leaving a portion over the sacrificial mask
- Remove portion of the sacrificial layer over the sacrificial mask
- Remove the sacrificial mask
- Epitaxially grow source/drain regions from the semiconductor substrate
- Electrically connect the source/drain regions to other devices
Potential Applications: - Semiconductor industry for integrated circuits - Electronics manufacturing for high-performance devices
Problems Solved: - Efficient formation of FinFET transistors - Precise patterning of conductive materials
Benefits: - Improved transistor performance - Enhanced device functionality - Increased efficiency in manufacturing process
Original Abstract Submitted
A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.
