17957106. ETCH STOP LAYER FOR METAL GATE CUT simplified abstract (Intel Corporation)
Contents
ETCH STOP LAYER FOR METAL GATE CUT
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Nikhil J. Mehta of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Daniel J. Harris of Beaverton OR (US)
ETCH STOP LAYER FOR METAL GATE CUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17957106 titled 'ETCH STOP LAYER FOR METAL GATE CUT
Simplified Explanation
The integrated circuit described in the abstract includes two adjacent devices with specific structures and materials. Here is a simplified explanation of the patent application:
- The integrated circuit has two devices, each with source and drain regions, a body made of semiconductor material, a sub-fin below the body, and a gate structure on top.
- A dielectric material is placed between the sub-fins of the two devices, with another dielectric material above it.
- A gate cut with dielectric material is positioned between the gate structures of the two devices.
- Potential Applications
The technology described in this patent application could be used in advanced semiconductor devices, such as high-performance transistors for electronic devices.
- Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by optimizing the structure and materials used in the devices.
- Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in electronic devices.
- Potential Commercial Applications
The technology could be applied in the development of next-generation processors, memory chips, and other semiconductor components for various industries.
- Possible Prior Art
One possible prior art for this technology could be the use of similar structures and materials in previous integrated circuit designs, but with different configurations.
- Unanswered Questions
- How does this technology compare to existing semiconductor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor designs to evaluate the performance and efficiency improvements.
- What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges that may arise in scaling up the production of integrated circuits using this technology.
Original Abstract Submitted
An integrated circuit includes laterally adjacent first and second devices. The first device includes (i) first source and drain regions, (ii) a first body including semiconductor material laterally extending between the first source and drain regions, (iii) a first sub-fin below the first body, and (iv) a first gate structure on the first body. The second device includes (i) second source and drain regions, (ii) a second body including semiconductor material laterally extending from the second source and drain regions, (iii) a second sub-fin below the second body, and (iv) a second gate structure on the second body. A second dielectric material is laterally between the first and second sub-fins. A third dielectric material is laterally between the first and second sub-fins, and above the second dielectric material. A gate cut including first dielectric material is laterally between the first and second gate structures, and above the third dielectric material.
