17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chih-Wei Lee of New Taipei City (TW)

Wen-Hung Huang of Hsinchu (TW)

Kuo-Feng Yu of Hsinchu County (TW)

Jian-Hao Chen of Hsinchu City (TW)

Hsueh-Ju Chen of Taipei City (TW)

Zoe Chen of Taipei City (TW)

Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461849 titled 'Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same

Simplified Explanation

The abstract describes a method for forming a structure with two channel members over a substrate. The method involves applying oxide layers and dielectric layers to the channel members, and then adding a capping layer over one of the dielectric layers. An annealing process is performed to increase the thickness of one of the oxide layers.

• The method involves providing a structure with two channel members in different regions.
• Oxide layers are formed over the channel members.
• Dielectric layers are formed over the oxide layers.
• A capping layer is added over one of the dielectric layers.
• An annealing process is performed to increase the thickness of one of the oxide layers.

Potential Applications

• This method can be used in the fabrication of electronic devices and integrated circuits.
• It can be applied in the manufacturing of transistors and other semiconductor components.

Problems Solved

• The method provides a way to control the thickness of oxide layers in a structure.
• It allows for the selective growth of oxide layers in specific regions.
• The annealing process helps to increase the thickness of oxide layers, which can improve the performance of electronic devices.

Benefits

• The method offers a simplified and efficient process for forming a structure with channel members.
• It allows for precise control over the thickness of oxide layers.
• The selective growth of oxide layers and the annealing process enhance the performance and reliability of electronic devices.

Original Abstract Submitted

A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.