17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958805 titled 'SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with three active areas on a substrate, each having a different gate electrode configuration. The first gate electrode consists of multiple layers including P-work-function metal, capping layer, N-work-function metal, barrier metal, and conductive layer. The second gate electrode has a similar structure but lacks the conductive layer. The third gate electrode has a different configuration with P-work-function metal, capping layer, N-work-function metal, and barrier metal, but no conductive layer.
- The patent application describes a semiconductor device with three active areas on a substrate.
- Each active area has a different gate electrode configuration.
- The first gate electrode consists of multiple layers including P-work-function metal, capping layer, N-work-function metal, barrier metal, and conductive layer.
- The second gate electrode has a similar structure but lacks the conductive layer.
- The third gate electrode has a different configuration with P-work-function metal, capping layer, N-work-function metal, and barrier metal, but no conductive layer.
Potential Applications
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems Solved
- Provides a versatile and flexible design for gate electrodes in semiconductor devices.
- Allows for different gate electrode configurations based on specific requirements.
- Enhances the performance and functionality of semiconductor devices.
Benefits
- Improved efficiency and performance of semiconductor devices.
- Increased flexibility in designing and manufacturing semiconductor devices.
- Enables the production of more advanced and specialized integrated circuits.
Original Abstract Submitted
In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on the first active area, a second gate electrode is formed on the second active area, and a third gate electrode is formed on the third active area. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers.
