18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contacts for Semiconductor Devices and Methods of Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
Contacts for Semiconductor Devices and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517458 titled 'Contacts for Semiconductor Devices and Methods of Forming the Same
Simplified Explanation
The patent application describes methods for forming contacts to source/drain regions and gate electrodes in low- and high-voltage devices. A device is disclosed with multiple channel regions, gates, and contacts, all arranged in a specific configuration.
- Device includes multiple channel regions, gates, and contacts
- Contacts extend through an ILD to connect to the respective source/drain regions
- Second contact is wider and taller than the first contact
- Top surface of the second channel region is below the top surface of the first channel region
Potential Applications
- Semiconductor devices
- Integrated circuits
- Electronics manufacturing
Problems Solved
- Efficient contact formation in low- and high-voltage devices
- Improved performance and reliability of devices
- Enhanced integration of components in semiconductor devices
Benefits
- Enhanced device performance
- Increased reliability
- Simplified manufacturing processes
- Improved integration of components
Original Abstract Submitted
Methods for forming contacts to source/drain regions and gate electrodes in low- and high-voltage devices and devices formed by the same are disclosed. In an embodiment a device includes a first channel region in a substrate adjacent a first source/drain region; a first gate over the first channel region; a second channel region in the substrate adjacent a second source/drain region, a top surface of the second channel region being below a top surface of the first channel region; a second gate over the second channel region; an ILD over the first gate and the second gate; a first contact extending through the ILD and coupled to the first source/drain region; and a second contact extending through the ILD, coupled to the second source/drain region, and having a width greater a width of the first contact and a height greater than a height of the first contact.
