18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320423 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes fin-type active regions protruding from the substrate to define a trench region, source/drain regions, device isolation film, etch stop structure, via power rail, and backside power rail.
- Fin-type active regions protrude from the substrate in a first lateral direction.
- Source/drain regions are located on the fin-type active regions.
- Device isolation film is present in the trench region, separate from the substrate vertically.
- Etch stop structure fills at least a portion of the trench region between the substrate and the device isolation film.
- Via power rail connects the pair of fin-type active regions and source/drain regions, passing through the etch stop structure.
- Backside power rail passes through the substrate and is in contact with one end of the via power rail.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by providing better power distribution and isolation, reducing signal interference, and enhancing overall functionality.
Benefits
The benefits of this technology include increased circuit reliability, reduced power consumption, improved signal integrity, and enhanced overall performance of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on cutting-edge electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar etch stop structures and power distribution methods in the fabrication of integrated circuits.
Unanswered Questions
How does this technology compare to existing power distribution methods in integrated circuits?
This article does not provide a direct comparison between this technology and existing power distribution methods in integrated circuits. Further research or analysis would be needed to determine the specific advantages and disadvantages of this innovation in comparison to traditional methods.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing. Factors such as cost, scalability, and compatibility with existing processes could pose challenges that need to be explored further.
Original Abstract Submitted
An integrated circuit (IC) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
