17691293. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Eunsil Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17691293 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with two active fins and a recess between them. It also includes a device isolation film, gate structures, and a field separation layer.
- The substrate has two active fins extending in one direction, with a recess between them.
- The device isolation film is placed on the substrate.
- There are gate structures on each active fin, extending in another direction.
- The field separation layer has two portions - one in the recess and one extending from both sides of the recess to the upper surface of the device isolation film.
- The recess has a bottom surface lower than the upper surface of the device isolation film.
- A region of the upper surface of the device isolation film is flat.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronic devices and components industry
Problems solved by this technology:
- Improved device isolation and separation
- Enhanced performance and efficiency of semiconductor devices
Benefits of this technology:
- Better control and management of electrical signals
- Increased functionality and reliability of semiconductor devices
- Improved manufacturing processes and yield rates
Original Abstract Submitted
A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.
