18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chun-Hsiung Tsai of Xinpu Township (TW)

Shahaji B. More of Hsinchu City (TW)

Cheng-Yi Peng of Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Kuo-Feng Yu of Zhudong Township (TW)

Ziwei Fang of Hsinchu (TW)

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18521913 titled 'FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Simplified Explanation

The patent application describes a FinFET device structure with multiple fin structures, an isolation structure, a gate structure, a source/drain structure, and a metal silicide layer.

• The FinFET device structure includes fin structures above a substrate.
• An isolation structure is positioned over the substrate and between the fin structures.
• A gate structure is formed over the fin structure.
• A source/drain (S/D) structure is located over the fin structure, adjacent to the gate structure.
• A metal silicide layer is present over the S/D structure, in contact with the isolation structure.

Potential Applications

The technology described in the patent application could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

The FinFET device structure addresses issues related to:

• Improving transistor performance
• Enhancing device density
• Reducing power consumption

Benefits

The benefits of the FinFET device structure include:

• Increased speed and efficiency
• Higher integration levels
• Lower power consumption

Potential Commercial Applications

The technology has potential commercial applications in:

• Mobile devices
• Computer processors
• IoT devices

Possible Prior Art

One example of prior art in this field is the use of traditional planar transistors in semiconductor devices.

Unanswered Questions

How does the FinFET device structure compare to other transistor designs in terms of performance and efficiency?

The article does not provide a direct comparison with other transistor designs to evaluate performance and efficiency.

What specific manufacturing processes are involved in creating the FinFET device structure?

The article does not detail the specific manufacturing processes used to create the FinFET device structure.

Original Abstract Submitted

A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.