Intel corporation (20240113106). ETCH STOP LAYER FOR METAL GATE CUT simplified abstract
Contents
- 1 ETCH STOP LAYER FOR METAL GATE CUT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ETCH STOP LAYER FOR METAL GATE CUT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ETCH STOP LAYER FOR METAL GATE CUT
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Nikhil J. Mehta of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Daniel J. Harris of Beaverton OR (US)
ETCH STOP LAYER FOR METAL GATE CUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113106 titled 'ETCH STOP LAYER FOR METAL GATE CUT
Simplified Explanation
The integrated circuit described in the abstract includes laterally adjacent first and second devices, each with source and drain regions, a body including semiconductor material, a sub-fin, and a gate structure. Dielectric materials are used to separate and insulate the components of the devices.
- The integrated circuit includes first and second devices with source and drain regions, bodies, sub-fins, and gate structures.
- Dielectric materials are used to separate and insulate the components of the devices.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by reducing interference between components and enhancing overall functionality.
Benefits
The use of dielectric materials in the integrated circuit design helps in minimizing leakage currents, improving signal integrity, and increasing the reliability of the devices.
Potential Commercial Applications
"Enhancing Integrated Circuit Performance with Dielectric Materials"
Possible Prior Art
Prior art may include patents or publications related to the use of dielectric materials in semiconductor devices, as well as research on improving the performance of integrated circuits through innovative design techniques.
Unanswered Questions
How does the integration of dielectric materials impact the overall size of the integrated circuit?
The abstract does not provide information on whether the use of dielectric materials affects the size or footprint of the integrated circuit.
What are the specific semiconductor materials used in the construction of the first and second devices?
The abstract does not mention the specific types of semiconductor materials utilized in the fabrication of the integrated circuit.
Original Abstract Submitted
an integrated circuit includes laterally adjacent first and second devices. the first device includes (i) first source and drain regions, (ii) a first body including semiconductor material laterally extending between the first source and drain regions, (iii) a first sub-fin below the first body, and (iv) a first gate structure on the first body. the second device includes (i) second source and drain regions, (ii) a second body including semiconductor material laterally extending from the second source and drain regions, (iii) a second sub-fin below the second body, and (iv) a second gate structure on the second body. a second dielectric material is laterally between the first and second sub-fins. a third dielectric material is laterally between the first and second sub-fins, and above the second dielectric material. a gate cut including first dielectric material is laterally between the first and second gate structures, and above the third dielectric material.
