17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
Contents
- 1 FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
Organization Name
Inventor(s)
Alison V. Davis of Portland OR (US)
Bern Youngblood of Hillsboro OR (US)
Reza Bayati of Portland OR (US)
Swapnadip Ghosh of Hillsboro OR (US)
Matthew J. Prince of Portland OR (US)
Jeffrey Miles Tan of Hillsboro OR (US)
FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17937212 titled 'FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
Simplified Explanation
The patent application describes techniques for forming semiconductor devices with gate cuts of different widths but similar heights. This is achieved by using different etching processes for gate cuts of varying widths while maintaining a consistent height.
- Gate cuts with different widths but similar heights
- Different etching processes used for gate cuts of varying widths
- Consistent height maintained for gate cuts of different widths
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors, to improve performance and efficiency.
Problems Solved
1. Ensures uniformity in gate cut dimensions 2. Enhances the precision and reliability of semiconductor devices
Benefits
1. Improved device performance 2. Enhanced manufacturing process efficiency 3. Consistent gate cut height for better device functionality
Potential Commercial Applications
"Semiconductor Device Manufacturing: Enhancing Gate Cut Precision and Uniformity"
Possible Prior Art
There may be prior art related to semiconductor device manufacturing processes that involve gate cuts of varying widths but similar heights.
Unanswered Questions
How does this technology impact the overall cost of semiconductor device manufacturing?
The patent application does not provide information on the cost implications of implementing this technology in semiconductor device manufacturing processes.
What are the potential challenges in scaling this technology for mass production?
The patent application does not address the scalability challenges that may arise when implementing this technology for mass production of semiconductor devices.
Original Abstract Submitted
Techniques are provided herein to form semiconductor devices that include gate cuts with different widths (e.g., at least a 1.5× difference in width) but substantially the same height (e.g., less than 5 nm difference in height). A given gate structure extending over one or more semiconductor regions may be interrupted with any number of gate cuts that each extend through an entire thickness of the gate structure. According to some embodiments, gate cuts of a similar first width are formed via a first etching process while gate cuts of a similar second width that is greater than the first width are formed via a second etching process that is different from the first etching process. Using different etch processes for gate cuts of different widths maintains a similar height for the gate cuts of different widths.
