18166750. SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsin-Che Chiang of Taipei City (TW)
Jeng-Ya Yeh of New Taipei City (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166750 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME
Simplified Explanation
The method described in the patent application involves forming a semiconductor device structure by creating an isolation layer over a substrate, followed by forming a spacer layer and a gate dielectric layer over the fins and isolation layer. The gate dielectric layer is partially removed to create a second trench, where a gate electrode is then formed.
- Formation of isolation layer over substrate
- Formation of spacer layer over fins and isolation layer
- Creation of gate dielectric layer and partial removal to form second trench
- Formation of gate electrode in the first trench
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a method for precise formation of gate electrodes and dielectric layers.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially lower power consumption in semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be similar methods used in the fabrication of semiconductor devices, such as FinFET transistors.
What materials are used in the formation of the gate dielectric layer?
The materials used in the formation of the gate dielectric layer are not specified in the abstract. Further details on the composition of the gate dielectric layer would be needed to answer this question.
How does the formation of the gate electrode impact the overall performance of the semiconductor device?
The abstract does not provide information on how the formation of the gate electrode affects the performance of the semiconductor device. Additional research or experimentation would be required to determine the specific impact of the gate electrode on device performance.
Original Abstract Submitted
A method for forming a semiconductor device structure is provided. The method includes forming an isolation layer over a substrate. The method includes forming a spacer layer over the first fin, the second fin, and the isolation layer. The method includes forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the isolation layer exposed by the first trench. The method includes partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin. The method includes forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer.
