18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Sung-Li Wang of Zhubei City (TW)

Yasutoshi Okuno of Hsinchu (TW)

Shih-Chuan Chiu of Hsinchu (TW)

CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18097323 titled 'CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS

Simplified Explanation

The patent application describes a method of forming a semiconductor device and a semiconductor device itself. Here are the key points:

• Method of forming a semiconductor device:

   * Forming a source/drain region on a substrate
   * Depositing a metal-rich metal silicide layer on the source/drain region
   * Depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer
   * Forming a contact plug on the silicon-rich metal silicide layer

• Semiconductor device:

   * Includes a fin structure on a substrate
   * Has a source/drain region on the fin structure
   * Features a metal-rich metal silicide layer on the source/drain region
   * Includes a silicon-rich metal silicide layer on the metal-rich metal silicide layer
   * Has a contact plug on the silicon-rich metal silicide layer

Potential applications of this technology:

• Semiconductor manufacturing industry
• Electronics industry
• Integrated circuit design and production

Problems solved by this technology:

• Improved performance and efficiency of semiconductor devices
• Enhanced conductivity and contact resistance in source/drain regions
• Better integration and compatibility with other components in a semiconductor device

Benefits of this technology:

• Higher performance and faster operation of semiconductor devices
• Improved reliability and durability of the devices
• Enhanced integration and miniaturization capabilities

Original Abstract Submitted

A method of forming a semiconductor device includes forming a source/drain region on a substrate, depositing a metal-rich metal silicide layer on the source/drain region, depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and forming a contact plug on the silicon-rich metal silicide layer. This disclosure also describes a semiconductor device including a fin structure on a substrate, a source/drain region on the fin structure, a metal-rich metal silicide layer on the source/drain region, a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and a contact plug on the silicon-rich metal silicide layer.