17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Meng-Huan Jao of Taichung City (TW)
Huan-Chieh Su of Changhua County (TW)
SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17892864 titled 'SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF
Simplified Explanation
The patent application describes a method for fabricating a structure with gate structures, source/drain electrodes, etch stop layers, and interlayer dielectric layers. The method involves forming trenches and depositing a dielectric layer and a metal layer into the trenches.
- The method involves providing a structure with gate structures, source/drain electrodes, etch stop layers, and interlayer dielectric layers.
- A first etch mask is formed and a first etching is performed to create first trenches in the structure.
- A third dielectric layer is deposited into the first trenches.
- A second etch mask is formed and a second etching is performed to create second trenches, exposing some of the source/drain electrodes.
- A metal layer is deposited into the second trenches.
Potential Applications
- This method can be used in the fabrication of semiconductor devices.
- It can be applied in the manufacturing of integrated circuits.
Problems Solved
- The method solves the problem of forming trenches in a structure with gate structures and source/drain electrodes.
- It addresses the challenge of depositing a dielectric layer and a metal layer into the trenches.
Benefits
- The method provides a simplified process for fabricating structures with trenches.
- It allows for the precise formation of trenches and deposition of dielectric and metal layers.
- The method improves the efficiency and reliability of semiconductor device manufacturing.
Original Abstract Submitted
A method includes providing a structure having gate structures, source/drain electrodes, a first etch stop layer (ESL), a first interlayer dielectric (ILD) layer, a second ESL, and a second ILD layer. The method includes forming a first etch mask; performing a first etching to the second ILD layer, the second ESL, and the first ILD layer through the first etch mask to form first trenches; depositing a third dielectric layer into the first trenches; forming a second etch mask; and performing a second etching to the second ILD layer, the second ESL, the first ILD layer, and the first ESL through the second etch mask, thereby forming second trenches, wherein the second trenches expose some of the source/drain electrodes, and the third dielectric layer resists the second etching. The method further includes depositing a metal layer into the second trenches.
