18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Soung-hee Lee of Hwaseong-si (KR)
Sang-gyo Chung of Anyang-si (KR)
Hyun-chul Lee of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18067168 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes an integrated circuit device that includes a device isolation trench, a gate trench, a gate dielectric film, and a conductive line. The active area of the device includes a fin body portion and a thinner fin portion.
- The integrated circuit device includes a device isolation trench that defines an active area.
- A gate trench extends across the active area and the device isolation film.
- A gate dielectric film covers the inner wall of the gate trench.
- A conductive line fills a part of the gate trench above the gate dielectric film.
- The active area includes a fin body portion located under the conductive line.
- A thinner fin portion protrudes from the fin body portion towards the conductive line.
- The width of the thinner fin portion is less than the width of the fin body portion.
Potential applications of this technology:
- Integrated circuit devices and systems
- Semiconductor manufacturing
Problems solved by this technology:
- Improved device isolation and gate trench structure
- Enhanced performance and functionality of integrated circuits
Benefits of this technology:
- More efficient use of space in the active area
- Improved electrical characteristics and performance of the integrated circuit device
- Enhanced integration and miniaturization capabilities
Original Abstract Submitted
An integrated circuit device includes a device isolation trench defining an active area, a gate trench extending in a first direction across the active area and the device isolation film, a gate dielectric film covering an inner wall of the gate trench, and a conductive line filling a part of the gate trench above the gate dielectric film. The active area includes a fin body portion located under the conductive line, and a thinner fin portion protruding from the fin body portion toward the conductive line and having a width less than a width of the fin body portion in the first direction.
