17460198. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ya-Yi Tsai of Hsinchu City (TW)
Shih-Yao Lin of New Taipei City (TW)
Chi-Hsiang Chang of Hsinchu (TW)
Shu-Yuan Ku of Zhubei City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17460198 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device. Here are the key points:
- The method involves forming a substrate and creating a plurality of fins that extend from the substrate. These fins include active fins in an active region and an inactive fin in an inactive region.
- The active fins are separated by first trench regions, while the inactive fin is separated from its closest active fin by a second trench region. The second trench region is wider than the first trench regions.
- A dummy fin is formed on the isolation dielectric in the second trench region. This dummy fin is positioned between the active fins and the inactive fin.
- A dummy gate is then formed over the fins, and a gate isolation structure is placed between the dummy fin and the inactive fin. This structure separates different regions of the dummy gate.
Potential applications of this technology:
- This method can be used in the fabrication of various semiconductor devices, such as transistors, integrated circuits, and microprocessors.
- It can be applied in the manufacturing of electronic devices like smartphones, computers, and other consumer electronics.
Problems solved by this technology:
- The method addresses the challenge of efficiently fabricating semiconductor devices with active and inactive regions.
- It solves the problem of effectively isolating the inactive fin from the active fins and the dummy gate.
Benefits of this technology:
- The method allows for the simplified fabrication of semiconductor devices with active and inactive regions.
- It provides improved isolation between the active and inactive regions, enhancing the performance and reliability of the semiconductor device.
- The use of dummy fins and gates helps optimize the design and functionality of the device.
Original Abstract Submitted
A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.
