18158036. AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Lin-Yu Huang of Hsinchu (TW)

Chia-Hao Chang of Hsinchu City (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Ching-Wei Tsai of Hsinchu City (TW)

Kuan-Lun Cheng of Hsinchu (TW)

AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158036 titled 'AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that includes air spacers and air caps, and a method of fabricating the device. The device consists of a substrate and a fin structure on the substrate, with a first fin portion and a second fin portion. It also includes a source/drain region, a contact structure, a gate structure, an air spacer, a cap seal, and an air cap.

  • The semiconductor device has air spacers and air caps to improve its performance and efficiency.
  • The fin structure provides a stable base for the device.
  • The source/drain region and contact structure enable electrical connections.
  • The gate structure controls the flow of current.
  • The air spacer between the gate structure and contact structure helps reduce leakage current.
  • The cap seal and air cap provide protection and stability to the gate structure.

Potential Applications

  • This technology can be applied in the manufacturing of various semiconductor devices, such as transistors and integrated circuits.
  • It can be used in the development of high-performance electronic devices, including smartphones, computers, and other consumer electronics.

Problems Solved

  • The use of air spacers and air caps helps address issues related to leakage current in semiconductor devices.
  • The technology improves the performance and efficiency of the devices by reducing power consumption and enhancing electrical connections.

Benefits

  • The semiconductor device with air spacers and air caps offers improved performance and efficiency.
  • It helps reduce power consumption and leakage current.
  • The technology provides stability and protection to the device components, enhancing its overall reliability.


Original Abstract Submitted

A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structure includes a first fin portion and a second fin portion. The semiconductor device further includes a source/drain (S/D) region disposed on the first fin portion, a contact structure disposed on the S/D region, a gate structure disposed on the second fin portion, an air spacer disposed between a sidewall of the gate structure and the contact structure, a cap seal disposed on the gate structure, and an air cap disposed between a top surface of the gate structure and the cap seal.

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