17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-Ruei Jhan of Keelung City (TW)

Kuan-Ting Pan of Taipei City (TW)

Wei Ting Wang of Taipei City (TW)

Shi Ning Ju of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17850845 titled 'INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The abstract describes a method of manufacturing an integrated circuit device. Here is a simplified explanation of the abstract:

• The method starts by forming a semiconductor fin on a semiconductor substrate.
• An isolation structure is then formed around the semiconductor fin to provide electrical isolation.
• A trench is etched in the semiconductor fin.
• A dielectric fin is formed in the trench.
• After forming the dielectric fin, the top surface of the isolation structure is recessed.
• This recess allows the dielectric fin and the semiconductor fin to protrude from the top surface of the isolation structure.
• Finally, a first metal gate structure and a second metal gate structure are formed over the dielectric fin and the semiconductor fin, respectively.

Potential applications of this technology:

• Manufacturing of integrated circuit devices, such as microprocessors, memory chips, and other electronic components.

Problems solved by this technology:

• Provides a method for forming a dielectric fin in a semiconductor fin, allowing for improved performance and functionality of integrated circuit devices.
• Enables the formation of metal gate structures over the dielectric fin and the semiconductor fin, enhancing the electrical properties of the integrated circuit device.

Benefits of this technology:

• Improved performance and functionality of integrated circuit devices.
• Enhanced electrical properties, leading to better efficiency and reliability.
• Enables the manufacturing of more advanced and complex integrated circuit devices.

Original Abstract Submitted

A method of manufacturing an integrated circuit device is provided. The method includes forming a semiconductor fin over a semiconductor substrate; forming an isolation structure surrounding the semiconductor fin; etching a trench in the semiconductor fin; forming a dielectric fin in the trench; after forming the dielectric fin, recessing a top surface of the isolation structure, such that the dielectric fin and the semiconductor fin protrude from the recessed top surface of the isolation structure; and forming a first metal gate structure and a second metal gate structure over the dielectric fin and the semiconductor fin, respectively.