18219232. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Joongwon Jeon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18219232 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with first and second regions, active fins extending in different directions on each region, an isolation pattern between the regions, and gate structures on the active fins with varying widths.
- The semiconductor device has a substrate with distinct regions for different components.
- Active fins extend in different directions on each region to optimize performance.
- An isolation pattern separates the regions to prevent interference.
- Gate structures on the active fins have varying widths for specific functionality.
Potential Applications
This technology could be applied in:
- High-performance computing
- Mobile devices
- Internet of Things (IoT) devices
Problems Solved
This technology addresses:
- Interference between components
- Optimization of performance
- Space efficiency in semiconductor design
Benefits
The benefits of this technology include:
- Improved performance
- Enhanced functionality
- Space-saving design
Potential Commercial Applications
This technology could be commercially applied in:
- Semiconductor manufacturing
- Electronics industry
- Research and development
Possible Prior Art
One possible prior art for this technology could be the use of gate structures with varying widths in semiconductor devices to optimize performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor designs to evaluate performance and efficiency.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
This article does not address the potential challenges in scaling up the implementation of this technology in semiconductor manufacturing processes.
Original Abstract Submitted
A semiconductor device includes a substrate including first and second regions; a first active fin extending in a first direction on the first region; a second active fin extending in the first direction on the second region; an isolation pattern on the substrate between the first and second regions; a first gate structure on the first active fin, extending in a second direction perpendicular to the first direction, and onto an upper surface of the isolation pattern; and a second gate structure on the second active fin, extending in the second direction, and onto the upper surface of the isolation pattern, wherein the first gate structure includes a first portion having a first width and a second portion having a second width that is less than the first width, and the second gate structure includes a third portion having the first width and a fourth portion having the second width.
