18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS

Organization Name

Intel Corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Biswajeet Guha of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

Swaminathan Sivakumar of Beaverton OR (US)

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18511604 titled 'NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS

Simplified Explanation

The abstract describes neighboring gate-all-around integrated circuit structures with disjoined epitaxial source or drain regions. The structure includes vertical arrangements of nanowires with different widths, gate stacks, epitaxial source or drain structures, and dielectric structures.

• First and second vertical arrangements of nanowires
• Nanowires of the second arrangement have greater horizontal width than those of the first arrangement
• First and second gate stacks are positioned over the vertical arrangements
• First epitaxial source or drain structures are at ends of the first vertical arrangement, and second structures are at ends of the second vertical arrangement
• Intervening dielectric structure separates neighboring epitaxial source or drain structures

Potential Applications

Neighboring gate-all-around integrated circuit structures with disjoined epitaxial source or drain regions can be used in:

• High-performance computing
• Advanced memory devices
• Quantum computing applications

Problems Solved

This technology solves the following problems:

• Improved control over source and drain regions
• Enhanced performance and efficiency of integrated circuits
• Reduction of parasitic effects in nanoscale devices

Benefits

The benefits of this technology include:

• Higher speed and lower power consumption in electronic devices
• Increased scalability and integration density
• Enhanced reliability and stability of integrated circuits

Potential Commercial Applications

Optimizing neighboring gate-all-around integrated circuit structures with disjoined epitaxial source or drain regions can lead to applications in:

• Semiconductor industry
• Electronics manufacturing
• Research and development for future computing technologies

How does this technology compare to existing integrated circuit structures in terms of performance and efficiency?

This article does not provide a direct comparison between the proposed technology and existing integrated circuit structures. Further research or testing may be needed to evaluate the performance and efficiency benefits of this innovation.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address potential challenges or limitations that may arise when implementing this technology in real-world applications. Additional studies or experiments could help identify and overcome any obstacles in the adoption of these structures.

Original Abstract Submitted

Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, and methods of fabricating neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, are described. For example, a structure includes first and second vertical arrangements of nanowires, the nanowires of the second vertical arrangement of nanowires having a horizontal width greater than a horizontal width of the nanowires of the first vertical arrangement of nanowires. First and second gate stacks are over the first and second vertical arrangements of nanowires, respectively. First epitaxial source or drain structures are at ends of the first vertical arrangement of nanowires, and second epitaxial source or drain structures are at ends of the second vertical arrangement of nanowires. An intervening dielectric structure is between neighboring ones of the first epitaxial source or drain structures and of the second epitaxial source or drain structures.