20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)

TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS

Organization Name

ETRON TECHNOLOGY, INC.

Inventor(s)

Chao-Chun Lu of Taipei City (TW)

TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240030347 titled 'TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS

Simplified Explanation

The abstract of the patent application describes a transistor structure that includes a semiconductor substrate, a gate structure, a channel region, and a first conductive region. The gate structure is positioned above the semiconductor surface, and a first concave is formed to expose the gate structure. The channel region is located beneath the semiconductor surface, and the first conductive region is electrically connected to the channel region. A second concave is formed to reveal the first conductive region, and a mask pattern is used in a photolithography process to define the first concave, with the mask pattern only defining one dimension length of the first concave.

• The patent application describes a transistor structure with specific features to enhance its performance and functionality.
• The gate structure is positioned above the semiconductor surface, allowing for better control of the transistor's operation.
• The first concave is formed to expose the gate structure, facilitating the connection and interaction with other components.
• The channel region is located beneath the semiconductor surface, ensuring efficient flow of current through the transistor.
• The first conductive region is electrically coupled to the channel region, enabling the desired electrical characteristics of the transistor.
• The second concave is formed to reveal the first conductive region, allowing for easy access and connection to other circuit elements.
• The use of a mask pattern in the photolithography process defines the first concave accurately, ensuring precise dimensions and alignment.

Potential Applications:

• This transistor structure can be used in various electronic devices, such as smartphones, computers, and integrated circuits.
• It can be applied in power amplifiers, memory devices, and microprocessors, improving their performance and efficiency.

Problems Solved:

• The transistor structure addresses the need for precise control and efficient flow of current in electronic devices.
• It solves the challenge of connecting and integrating different components within a transistor structure effectively.
• The use of specific concave formations and mask patterns ensures accurate dimensions and alignment, overcoming manufacturing challenges.

Benefits:

• The transistor structure enhances the performance and functionality of electronic devices, leading to improved overall device performance.
• It enables better control and regulation of current flow, resulting in increased efficiency and power management.
• The precise dimensions and alignment achieved through the use of concave formations and mask patterns ensure reliable and consistent transistor performance.

Original Abstract Submitted

a transistor structure includes a semiconductor substrate, a gate structure, a channel region, and a first conductive region. the semiconductor substrate has a semiconductor surface. the gate structure is above the semiconductor surface, and a first concave is formed to reveal the gate structure. the channel region is under the semiconductor surface. the first conductive region is electrically coupled to the channel region, and a second concave is formed to reveal the first conductive region. a mask pattern in a photolithography process is used to define the first concave, and the mask pattern only defines one dimension length of the first concave.