17837833. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Tzu-Ging Lin of Kaohsiung (TW)
Chun-Liang Lai of Hsinchu (TW)
Chih-Chang Hung of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17837833 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device structure and methods of forming it. The structure includes a substrate and an isolation structure between two neighboring transistors. The isolation structure consists of a dielectric feature and an insulating material below it. The insulating material has an upper portion with a first sidewall and a top surface in contact with the dielectric feature, a bottom portion with a second sidewall in contact with the substrate, and a middle portion with a third sidewall between the first and second sidewalls. The structure also includes a dielectric material in contact with the dielectric feature, first sidewall, third sidewall, and substrate.
- The patent application describes a new semiconductor device structure.
- The structure includes an isolation structure between neighboring transistors.
- The isolation structure consists of a dielectric feature and an insulating material.
- The insulating material has an upper portion, a bottom portion, and a middle portion.
- The upper portion has a first sidewall and a top surface in contact with the dielectric feature.
- The bottom portion has a second sidewall in contact with the substrate.
- The middle portion has a third sidewall between the first and second sidewalls.
- The structure also includes a dielectric material in contact with various components.
Potential Applications
This technology can be applied in various semiconductor devices, including:
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
- Sensors
Problems Solved
The described semiconductor device structure solves several problems in the field, such as:
- Improving isolation between neighboring transistors
- Enhancing the performance and reliability of semiconductor devices
- Reducing leakage current and parasitic capacitance
- Increasing integration density and packing more transistors in a smaller area
Benefits
The use of this semiconductor device structure offers several benefits, including:
- Improved electrical isolation between transistors
- Enhanced performance and reliability of semiconductor devices
- Reduced leakage current and parasitic capacitance, leading to lower power consumption
- Increased integration density, allowing for more functionality in a smaller footprint
Original Abstract Submitted
A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a substrate and an isolation structure disposed on the substrate and between two neighboring transistors. The isolation structure includes a dielectric feature, an insulating material disposed below the dielectric feature. The insulating material includes an upper portion comprising a first sidewall and a top surface in contact with the dielectric feature, and a bottom portion having a second sidewall, wherein the second sidewall is surrounded by and in contact with the substrate. The insulating material further includes a middle portion having a third sidewall disposed between the first sidewall and the second sidewall. The semiconductor device structure also includes a dielectric material in contact with the dielectric feature, the first sidewall, the third sidewall, and the substrate.
