18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyu Man Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18298678 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern, lower nanosheets, a separation layer, upper nanosheets, a gate electrode, and a first conductive layer.
- The active pattern extends in a first horizontal direction.
- The lower nanosheets are stacked on the active pattern and spaced apart from each other in a vertical direction.
- The separation layer is on the lower nanosheets.
- The upper nanosheets are stacked on the separation layer and spaced apart from each other in the vertical direction.
- The gate electrode extends on the active pattern in a second horizontal direction, surrounding each of the lower nanosheets, the separation layer, and the upper nanosheets.
- The first conductive layer is between the gate electrode and each of a top surface and a bottom surface of the upper nanosheets, but not between the gate electrode and the sidewalls of the upper nanosheets.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the control and functionality of the nanosheets within the device structure.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and improved overall performance of semiconductor devices, leading to enhanced user experience and technological advancements.
Potential Commercial Applications
The potential commercial applications of this technology could be in the manufacturing of next-generation processors, memory devices, sensors, and other electronic components for a wide range of industries.
Possible Prior Art
One possible prior art for this technology could be the use of nanosheets in semiconductor devices for improving transistor performance and density. Researchers have been exploring various nanosheet structures and configurations to enhance device characteristics and functionality.
What is the manufacturing process for creating the semiconductor device described in the patent application?
The manufacturing process for creating the semiconductor device involves precise deposition, etching, and layering of materials to form the active pattern, nanosheets, separation layer, gate electrode, and conductive layer. Each step requires specialized equipment and techniques to ensure the proper alignment and functionality of the device components.
How does the performance of the semiconductor device compare to traditional transistor designs?
The performance of the semiconductor device with nanosheets is expected to surpass traditional transistor designs in terms of speed, power efficiency, and overall functionality. The unique structure and configuration of the nanosheets allow for better control of the device operation, leading to improved performance metrics.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.
