18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
Contents
- 1 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
Organization Name
Inventor(s)
Sudipto Naskar of Portland OR (US)
Biswajeet Guha of Hillsboro OR (US)
William Hsu of Hillsboro OR (US)
Bruce Beattie of Portland OR (US)
Tahir Ghani of Portland OR (US)
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18390952 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
Simplified Explanation
The abstract describes gate-all-around integrated circuit structures fabricated using alternate etch selective material, resulting in a vertical arrangement of horizontal nanowires with a gate stack, dielectric spacers, and metal oxide material.
- Vertical arrangement of horizontal nanowires
- Gate stack over the nanowires
- Dielectric spacers on sides of gate stack
- Metal oxide material between nanowires
- Fabricated using alternate etch selective material
Potential Applications
The technology could be applied in the development of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by enhancing the control of electrical signals within the circuit, leading to faster processing speeds and reduced power consumption.
Benefits
The gate-all-around integrated circuit structures offer increased scalability, improved reliability, and enhanced functionality compared to traditional designs, making them ideal for advanced semiconductor applications.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of next-generation processors, memory devices, and other advanced electronic components.
Possible Prior Art
One possible prior art could be the use of FinFET structures in integrated circuits, which also aim to improve performance and efficiency by controlling electrical signals in a three-dimensional layout.
What are the specific electronic devices that could benefit from this technology?
Various electronic devices such as smartphones, computers, tablets, and IoT devices could benefit from the improved performance and efficiency offered by this technology.
How does this technology compare to existing integrated circuit structures in terms of power consumption?
This technology aims to reduce power consumption by enhancing the control of electrical signals within the circuit, leading to more efficient operation compared to traditional designs.
Original Abstract Submitted
Gate-all-around integrated circuit structures fabricated using alternate etch selective material, and the resulting structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is over the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is along sides of the gate stack and over the vertical arrangement of horizontal nanowires. A metal oxide material is between adjacent ones of the vertical arrangement of horizontal nanowires at a location between the pair of dielectric spacers and the sides of the gate stack.
