18401955. Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Shallow Trench Isolation Forming Method and Structures Resulting Therefrom - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the variation in depth and width of the recesses impact the performance of the treated dielectric layer?
- 1.11 What methods are used to convert the dielectric layer into a treated dielectric layer?
- 1.12 Original Abstract Submitted
Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shallow Trench Isolation Forming Method and Structures Resulting Therefrom - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401955 titled 'Shallow Trench Isolation Forming Method and Structures Resulting Therefrom
Simplified Explanation
The method described in the abstract involves forming fins in different regions of a substrate, with recesses between the fins. A dielectric layer is then formed in the recesses and converted into a treated dielectric layer.
- Formation of fins in different regions of a substrate
- Creation of recesses between adjacent fins
- Variation in depth and width of the recesses in different regions
- Formation of a dielectric layer in the recesses
- Conversion of the dielectric layer into a treated dielectric layer
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the manufacturing of advanced integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of electronic devices by enhancing the insulation properties of the dielectric layer.
Benefits
The treated dielectric layer can provide better isolation between components, leading to reduced interference and improved overall functionality of electronic devices.
Potential Commercial Applications
- Advanced semiconductor manufacturing
- Electronics industry for improved circuit performance
Possible Prior Art
There may be prior art related to the formation and treatment of dielectric layers in semiconductor devices, but specific examples are not provided in this context.
Unanswered Questions
How does the variation in depth and width of the recesses impact the performance of the treated dielectric layer?
The abstract does not provide details on how the specific dimensions of the recesses affect the properties of the treated dielectric layer.
What methods are used to convert the dielectric layer into a treated dielectric layer?
The abstract mentions the conversion process but does not elaborate on the techniques or processes involved in this transformation.
Original Abstract Submitted
A method includes forming a first plurality of fins in a first region of a substrate, a first recess being interposed between adjacent fins in the first region of the substrate, the first recess having a first depth and a first width, forming a second plurality of fins in a second region of the substrate, a second recess being interposed between adjacent fins in the second region of the substrate, the second recess having a second depth and a second width, the second width of the second recess being less than the first width of the first recess, the second depth of the second recess being less than the first depth of the first recess, forming a first dielectric layer in the first recess and the second recess, and converting the first dielectric layer in the first recess and the second recess to a treated dielectric layer.
