18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18214861 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes an integrated circuit semiconductor device that includes two transistors with connected gate electrodes. The gate electrodes have recess regions between them, and the widths of the sidewalls of the gate electrodes vary.
- The integrated circuit semiconductor device includes two transistors with connected gate electrodes.
- The gate electrodes have recess regions between them.
- The first gate electrode has a narrower sidewall on one side of the recess region compared to the other side.
- The second gate electrode also has a narrower sidewall on one side of the recess region compared to the other side.
Potential Applications:
- This technology can be used in various electronic devices that utilize integrated circuits, such as smartphones, computers, and tablets.
- It can be applied in the development of advanced processors and memory chips.
Problems Solved:
- The technology addresses the need for improved performance and efficiency in integrated circuit semiconductor devices.
- It solves the challenge of reducing the size and increasing the density of transistors on a substrate.
Benefits:
- The integrated circuit semiconductor device can achieve higher performance due to the improved design of the gate electrodes.
- The technology allows for increased integration of transistors on a substrate, leading to more compact and efficient electronic devices.
- It enables the development of smaller and more powerful processors and memory chips.
Original Abstract Submitted
An integrated circuit semiconductor device includes a first transistor on a substrate. The first transistor includes a first gate electrode. A second transistor is on the substrate and is spaced apart from the first transistor. The second transistor includes a second gate electrode directly connected to the first gate electrode. A recess region is recessed in surfaces of the first and second gate electrodes and is arranged between the first and second gate electrodes. A first width of a first sidewall of the first gate electrode is less than a second width of a second sidewall of the first gate electrode adjacent to the recess region and opposite the first sidewall. A third width of a third sidewall of the second gate electrode is less than a fourth width of a fourth sidewall of the second gate electrode adjacent to the recess region and opposite the third sidewall.
