18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Alexander Kalnitsky of San Francisco CA (US)

Wei-Cheng Wu of Hsinchu County (TW)

Harry-Hak-Lay Chuang of Zhubei City (TW)

SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18527151 titled 'SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE

Simplified Explanation

The semiconductor device described in the patent application includes a substrate, first and second wells, a metal gate, a poly gate, a source region, and a drain region. The metal gate partially covers the first well, while the poly gate is positioned over the second well. The poly gate is separated from the metal gate, with a specific width ratio between the two gates. The source and drain regions are located within the respective wells.

• The semiconductor device comprises a substrate with first and second wells, metal and poly gates, and source and drain regions.
• The metal gate covers the first well partially, while the poly gate is positioned over the second well.
• The poly gate is separated from the metal gate, with a specific width ratio between the two gates.
• The source and drain regions are located within the first and second wells, respectively.

Potential Applications

The technology described in the patent application could have potential applications in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

This technology addresses the following issues:

• Improved performance and efficiency of semiconductor devices
• Enhanced control and functionality of integrated circuits
• Reduction of power consumption in electronic devices

Benefits

The benefits of this technology include:

• Higher speed and reliability of semiconductor devices
• Increased precision and accuracy in circuit design
• Energy-efficient operation of electronic systems

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art in this field could be the use of similar gate structures in semiconductor devices for improved performance and functionality.

Unanswered Questions

How does the specific width ratio between the poly gate and metal gate impact the overall performance of the semiconductor device?

The specific width ratio between the poly gate and metal gate is crucial for optimizing the device's performance, but the exact relationship and its effects are not explicitly discussed in the abstract.

What specific materials are used in the construction of the gates and wells in this semiconductor device?

The abstract does not provide details on the specific materials used in the construction of the gates and wells, which could be essential for understanding the device's properties and applications.

Original Abstract Submitted

A semiconductor device includes a substrate, a first well, a second well, a metal gate, a poly gate, a source region, and a drain region. The first well and the second well are within the substrate. The metal gate is partially over the first well. The poly gate is over the second well. The poly gate is separated from the metal gate, and a width ratio of the poly gate to the metal gate is in a range from about 0.1 to about 0.2. The source region and the drain region are respectively within the first well and the second well.