17541894. STAGGERED STACKED SEMICONDUCTOR DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
STAGGERED STACKED SEMICONDUCTOR DEVICES
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Junli Wang of Slingerlands NY (US)
Albert M. Young of Fishkill NY (US)
Vidhi Zalani of Peekskill NY (US)
Dechao Guo of Niskayuna NY (US)
STAGGERED STACKED SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17541894 titled 'STAGGERED STACKED SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor structure that includes two transistor devices stacked on top of each other. The first transistor device has multiple channel regions, as does the second transistor device. However, the channel regions of the first transistor device are arranged in a staggered configuration relative to the channel regions of the second transistor device.
- The semiconductor structure includes two stacked transistor devices.
- The first transistor device has multiple channel regions.
- The second transistor device also has multiple channel regions.
- The channel regions of the first transistor device are arranged in a staggered configuration compared to the channel regions of the second transistor device.
Potential Applications
- Integrated circuits
- Electronic devices
- Semiconductor manufacturing
Problems Solved
- Improved performance and efficiency of transistor devices
- Enhanced integration of multiple transistor devices in a compact structure
Benefits
- Increased functionality and capabilities of integrated circuits
- Higher performance and efficiency of electronic devices
- Improved manufacturing processes for semiconductor structures
Original Abstract Submitted
A semiconductor structure includes a first transistor device comprising a plurality of channel regions. The semiconductor structure further includes a second transistor device comprising a plurality of channel regions. The first transistor device and the second transistor device are disposed in a stacked configuration. The plurality of channel regions of the first transistor device are disposed in a staggered configuration relative to the plurality of channel regions of the second transistor device.
