17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)

SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

Organization Name

Intel Corporation

Inventor(s)

Debaleena Nandi of Hillsboro OR (US)

Imola Zigoneanu of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

Anant H. Jahagirdar of Hillsboro OR (US)

Harold W. Kennel of Portland OR (US)

Pratik Patel of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Chi-Hing Choi of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

Tahir Ghani of Portland OR (US)

SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17850782 titled 'SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

Simplified Explanation

The patent application describes integrated circuit structures with low resistivity source or drain structures. The structures include a fin with a lower and upper portion, and a gate stack over the upper portion. There are two source or drain structures on either side of the gate stack, each embedded in the fin. These structures contain silicon, germanium, gallium, and boron, and have a resistivity less than 2E-9 Ohm cm.

• Integrated circuit structures with low resistivity source or drain structures
• Structures include a fin with a lower and upper portion
• Gate stack is placed over the upper portion of the fin
• Two source or drain structures are embedded in the fin on either side of the gate stack
• Source or drain structures contain silicon, germanium, gallium, and boron
• Resistivity of the structures is less than 2E-9 Ohm cm

Potential Applications

• Semiconductor industry
• Integrated circuit manufacturing
• Electronics manufacturing

Problems Solved

• High resistivity in source or drain structures
• Improved performance and efficiency of integrated circuits

Benefits

• Lower resistivity in source or drain structures
• Enhanced conductivity and performance of integrated circuits
• Improved efficiency and power consumption in electronic devices

Original Abstract Submitted

Integrated circuit structures having source or drain structures with low resistivity are described. In an example, integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each epitaxial structure of the first and second source or drain structures include silicon, germanium, gallium and boron. The first and second source or drain structures have a resistivity less than 2E-9 Ohm cm.