18378710. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Seungmin Song of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18378710 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes the following features:
- An active pattern on a substrate, extending in a first direction parallel to the upper surface of the substrate.
- A gate structure on the active pattern, extending in a second direction parallel to the upper surface of the substrate and crossing the first direction.
- Channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, extending through the gate structure.
- A source/drain layer on a portion of the active pattern adjacent to the gate structure, contacting the channels.
- A sacrificial pattern on the upper surface of each opposite edge of the portion of the active pattern in the second direction, contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
Potential applications of this technology:
- Semiconductor devices with improved performance and functionality.
- Integrated circuits with higher speed and lower power consumption.
- Advanced electronic devices such as smartphones, tablets, and computers.
Problems solved by this technology:
- Enhances the performance of semiconductor devices by optimizing the active pattern and gate structure.
- Improves the contact between the source/drain layer and the channels, leading to better conductivity and efficiency.
- Reduces the risk of short circuits and other electrical issues.
Benefits of this technology:
- Increased speed and efficiency of semiconductor devices.
- Enhanced functionality and performance of integrated circuits.
- Improved reliability and durability of electronic devices.
- Potential for smaller and more compact device designs.
Original Abstract Submitted
A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
