18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Semiconductor Structure Cutting Process and Structures Formed Thereby

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chih-Chang Hung of Hsinchu (TW)

Chia-Jen Chen of Hsinchu (TW)

Ming-Ching Chang of Hsinchu (TW)

Shu-Yuan Ku of Zhubei City (TW)

Yi-Hsuan Hsiao of Taipei City (TW)

I-Wei Yang of Yilan County (TW)

Semiconductor Structure Cutting Process and Structures Formed Thereby - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526290 titled 'Semiconductor Structure Cutting Process and Structures Formed Thereby

Simplified Explanation

The patent application describes methods of cutting gate structures and structures formed, including a gate cut-fill structure with first and second primary portions and an intermediate portion. The primary portions abut the gate structures, while the intermediate portion extends laterally between them.

• The structure includes first and second gate structures over an active area, with a gate cut-fill structure.
• The first and second gate structures extend parallel, with a source/drain region between them.
• The first and second primary portions of the gate cut-fill structure abut the gate structures, while the intermediate portion extends between them.
• The widths of the primary portions are greater than the width of the intermediate portion midway between the gate structures.

Potential Applications

This technology could be applied in semiconductor manufacturing processes, specifically in the fabrication of gate structures in integrated circuits.

Problems Solved

This technology solves the problem of efficiently cutting gate structures in a way that optimizes space and layout in semiconductor devices.

Benefits

The benefits of this technology include improved efficiency in manufacturing processes, increased density of components in integrated circuits, and potentially enhanced performance of electronic devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the production of advanced microprocessors for use in various electronic devices.

Possible Prior Art

One possible prior art could be the use of similar gate cut-fill structures in semiconductor manufacturing processes to optimize layout and space utilization.

How does this technology compare to existing methods of cutting gate structures in semiconductor devices?

This article does not provide a direct comparison to existing methods, leaving it unclear how this technology differs or improves upon current practices.

What are the specific manufacturing challenges that this technology addresses in semiconductor fabrication processes?

The article does not delve into the specific challenges that this technology helps overcome, leaving a gap in understanding the practical implications of its implementation.

Original Abstract Submitted

Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.