18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoonjoong Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18318587 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that consists of multiple channel structures, impurity region structures, and gate structures on a substrate. Here is a simplified explanation of the patent application:
- The semiconductor device has first and second channel structures, which are regions on the substrate that control the flow of electrical current.
- Between the first channel structures, there is a first impurity region structure, which is a region with a different impurity concentration than the surrounding substrate.
- Similarly, between the second channel structures, there is a second impurity region structure.
- Between the first and second channel structures, there is a third impurity region structure.
- The gate structures are located between the first to third impurity region structures and are responsible for controlling the operation of the channel structures.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices, such as smartphones, computers, and other consumer electronics.
- It can be utilized in power management circuits, amplifiers, and other integrated circuits.
Problems solved by this technology:
- The device allows for precise control of electrical current flow, improving the efficiency and performance of electronic devices.
- It helps in reducing power consumption and heat generation, leading to longer battery life and improved device reliability.
Benefits of this technology:
- Enhanced performance and efficiency of electronic devices.
- Improved power management and reduced power consumption.
- Longer battery life for portable devices.
- Increased reliability and stability of integrated circuits.
Original Abstract Submitted
A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between second channel structures, a third impurity region structure between the first and second channel structures, and a plurality of gate structures disposed between the first to third impurity region structures, respectively.
