Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract

STACKED SOURCE OR DRAIN CONTACT FLYOVER

Organization Name

intel corporation

Inventor(s)

Sukru Yemenicioglu of Portand OR (US)

Quan Shi of Portland OR (US)

Marni Nabors of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Xinning Wang of Hillsboro OR (US)

Tahir Ghani of Portland OR (US)

Andy Chih-Hung Wei of Yamhill OR (US)

Mohit K. Haran of Forest Grove OR (US)

Leonard P. Guler of Hillsboro OR (US)

Sivakumar Venkataraman of Hillsboro OR (US)

Reken Patel of Portland OR (US)

Richard Schenker of Portland OR (US)

STACKED SOURCE OR DRAIN CONTACT FLYOVER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113177 titled 'STACKED SOURCE OR DRAIN CONTACT FLYOVER

Simplified Explanation

The abstract describes an integrated circuit with two devices, each having a source or drain region. A conductive source or drain contact connects the two regions, with a dielectric material separating it from one of the regions. The devices can be gate-all-around structures or finFETs.

• Integrated circuit with two devices
• Conductive source or drain contact connecting the two devices
• Dielectric material separating the contact from one of the devices
• Devices can be gate-all-around structures or finFETs

Potential Applications

The technology described in the patent application could be used in various electronic devices such as smartphones, tablets, laptops, and other computing devices.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by providing a more efficient way of connecting different devices within the circuit.

Benefits

The benefits of this technology include increased speed, reduced power consumption, and improved overall performance of electronic devices.

Potential Commercial Applications

The technology could be applied in the semiconductor industry for manufacturing advanced integrated circuits for consumer electronics, communication devices, and other high-tech applications.

Possible Prior Art

One possible prior art could be the use of similar structures in previous integrated circuit designs to improve performance and connectivity.

How does this technology compare to existing methods of connecting devices in integrated circuits?

This article does not provide a direct comparison between this technology and existing methods of connecting devices in integrated circuits.

What are the specific manufacturing processes involved in implementing this technology?

The article does not delve into the specific manufacturing processes involved in implementing this technology.

Original Abstract Submitted

an integrated circuit includes a first device having a first source or drain region, and a second device having a second source or drain region that is laterally adjacent to the first source or drain region. a conductive source or drain contact includes (i) a lower portion in contact with the first source or drain region, and extending above the first source or drain region, and (ii) an upper portion extending laterally from above the lower portion to above the second source or drain region. a dielectric material is between at least a section of the upper portion of the conductive source or drain contact and the second source or drain region. in an example, each of the first and second devices is a gate-all-around (gaa) device having one or more nanoribbons, nanowires, or nanosheets as channel regions, or is a finfet structure having a fin-based channel region.